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NDT452AP MOSFET P-Channel -30V -5A 0.052ohm SOT-223 marking 452A High density cell design low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.052Ω @-5A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--2.8V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. |
| 描述与应用 | 高密度电池设计极低的RDS（ON） 一种广泛使用的高功率和电流处理能力 表面贴装封装 |
