NE32584C-T1 MESFET-N channel 4V 20mA-90mA -0.2V -- -2.0V + marking D RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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NE32584C-T1 MESFET-N channel 4V 20mA-90mA -0.2V -- -2.0V + marking D RF application

Model：NE32584C-T1
Mark / screen / code / typing：D
Manufacturer：
Date Code：05+
Package：+
Standard Package：
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	4V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-3V
漏极电流(Vgs=0V)IDSS Drain Current	20mA-90mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.2V -- -2.0V
耗散功率Pd Power Dissipation	165mW/0.165W
Description & Applications	HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER Super Low Noise Figure & High Associated Gain
描述与应用	异质结型场效应晶体管 C到Ku波段超低噪声放大器超级低噪声系数和高相关的收益

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