Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
NK424 MOSFET N-Channel 18V 25mA SOT-143 marking U1E DC-DC converter/low RDS/delay battery life
| 最大源漏极电压Vds Drain-Source Voltage | 18V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0-1.0V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold |
| 描述与应用 | NEC的3.2 V，W，L/ S频段中功率硅LD-MOSFET NEC的NE5520379A是一个N沟道功率MOSFET硅 而特别设计的发送功率的放大器，用于 3.2 V GSM900手机。模具是采用NEC的制造 NEWMOS技术（NEC的0.6微米WSI门横向MOSFET），并装在一个表面贴装封装。此设备 可提供35.5 dBm的输出功率在915兆赫和3.2 V，或 34.6 dBm的输出功率的功率控制功能，通过改变栅极电压的2.8 V。 •低VDD使用方法：（VDS=3.5 V） •驾驶电池 •低噪声系数：NF1= 2.0 dB（典型值）。 （六= 470兆赫） NF2=0.8 dB典型值。 （六= 55兆赫） •高功率增益：GPS=19.0 dB典型值。 （六= 470兆赫） •适合用作RF放大器CATV调谐器。 •自动安装：压花类型大坪 •包装：4针脚 |
