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NTE4151PT1 MOSFET P-Channel -20V -760mA 0.26ohm SOT-523 marking TM high efficiency ESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | -760mA/-0.76A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.26Ω @-3.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 301mW/0.301W |
| Description & Applications | Features • Low RDS(on) for Higher Efficiency and Longer Battery Life • Small Outline Package (1.6 x 1.6 mm) • SC−75 Standard Gullwing Package • ESD Protected Gate • Pb−Free Packages are Available |
| 描述与应用 | •低的RDS（on） 更高的效率和更长的电池寿命 •小型封装（1.6×1.6毫米） •SC-75标准鸥翼式封装 •ESD保护门 •无铅包可用 |
