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NTQD6866R2 Complex FET 20V 6.9A tssop8 marking 866 battery application
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 38mΩ@ VGS =2.5V, ID =2.9A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.2V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Power MOSFET Features • New Low Profile TSSOP–8 Package • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperatures Applications • Power Management in Portable and Battery–Powered Products, i.e.:Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones • Battery Applications • NoteBook PC |
| 描述与应用 | 功率MOSFET 特点 •新的薄型TSSOP-8封装 •超低RDS（开） •更高的效率延长电池寿命 •逻辑电平栅极驱动器 •二极管具有高速软恢复 •雪崩能量 •IDSS和VDS（开）指定高温 应用 •电源管理在便携式和电池供电产品，如：电脑，打印机，PCMCIA卡，蜂窝电话和无绳电话 •电池的应用 •笔记本电脑 |
