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NTR4501NT1 MOSFET N-Channel 20V 3.2A SOT-23/SC-59 marking TR1 high density battery designed low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.08Ω/Ohm @3.6A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.65-1.2V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 • Load/Power Switch for Portables • Load/Power Switch for Computing • DC−DC Conversion |
| 描述与应用 | 功率MOSFET 3.2 V，20 A单N沟道，SOT-23 •用于便携式设备的负载/功率开关 •计算负载/功率开关 •DC-DC转换 |
