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P01N02LMB MOSFET N-Channel 1.2A SOT-23/SC-59 marking 102B fast switch/low drive

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Product description
最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage15V
最大漏极电流Id Drain Current1.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.22Ω/Ohm @1.2A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.7-2.5V
耗散功率Pd Power Dissipation600mW/0.6W
Description & ApplicationsN-Channel Logic Level Enhancement Mode Field Effect Transistor
描述与应用N沟道逻辑电平增强 模式场效应晶体管
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