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PBSS5350D PNP transistors(BJT) -60V -3A 100MHz 200 -300mV/-0.3V SOT23-6/SC-74 marking 53 battery drive

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
600mW/0.6W
Description & ApplicationsPNP transistor FEATURES • High current capabilities • Low VCEsat • NPN complement: PBSS4350D. APPLICATIONS • Heavy duty battery powered equipment (Automotive,Telecom and Audio/Video) such as motor and lamp drivers. • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power
描述与应用PNP晶体管 特点 •高电流能力 •低VCESAT •NPN补充:PBSS4350D。 应用 •重载电池供电设备(汽车,电信和音频/视频),如电机和灯驱动器。 VCE监测的关键应用,如最新的低电源 电压IC应用 •所有电池驱动的设备,以节省电池电量
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