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PH5330E MOSFET N-Channel 30V 80A SOT-669 marking 5330E fast switch/low drive

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current80A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation62.5W
Description & ApplicationsN-channel TrenchMOS™ logic level FET
描述与应用N沟道的TrenchMOS™逻辑电平FET
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