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PHT4NQ10T MOSFET N-Channel 100V 3.5A SOT-223/SC-73/TO261-4 marking 4NQ10T low on-resistance/DMOStechnology
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 6.9W |
| Description & Applications | N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. TrenchMOS™ technology Very fast switching Surface mount package. |
| 描述与应用 | N沟道增强型场效应晶体管 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技术。 开关速度非常快 表面贴装封装 |
