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PHT6N06T MOSFET N-Channel 55V 5.5A SOT-223/SC-73/TO261-4 marking 6N06T low on-resistance/DMOStechnology

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Product description
最大源漏极电压Vds Drain-Source Voltage55V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current5.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.15Ω/Ohm @5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2.0-4.0V
耗散功率Pd Power Dissipation8.3W
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