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PMGD8000LN Complex FET 30V 125mA/0.125A SOT-363/SC70-6 marking D8 battery management high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 125mA/0.125A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 13Ω@ VGS =2.5V, ID =1mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Dual Trench MOS logic level FET Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS technology. Features Trench MOS technology Very fast switching Logic level compatible Subminiature surface mount package Applications Battery management High-speed switch Low power DC-to-DC converter. |
| 描述与应用 | 双沟槽MOS逻辑电平FET 描述 双N沟道增强型场效应晶体管在一个塑料包装用 沟槽MOS的技术。 特点 沟槽MOS技术 开关速度非常快 逻辑电平兼容 超小型表面贴装封装 应用 电池管理 高速开关 低功率的DC-DC转换器。 |
