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PMV65XP MOSFET P-Channel -20V -4.3A 0.065ohm SOT-23 marking WM9 low threshold voltage low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-4.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.065Ω @-1A,-4.7V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.47--0.9
耗散功率Pd
Power Dissipation
480mW/0.48W
Description & Applications20 V, single P-channel Trench MOSFET Low threshold voltage Low on-state resistance Trench MOSFET technology
描述与应用20 V,单P沟道沟道MOSFET 低阈值电压 低通态电阻 沟道MOSFET技术
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