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PZTA92T1 PNP transistors(BJT) -300V -50mA 50MHz 40 -500mV/-0.5V SOT-223/TO-261AA marking P2D high voltage
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流IC Collector Current(IC) | -50mA |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 40 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 1.5W |
Description & Applications | High Voltage Transistor PNP Silicon Features • Pb−Free Package |
描述与应用 | PNP硅高压晶体管 特点 •无铅封装 |