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QS5K2 Complex FET 30V 2A SOT-153/SOT23-5/TSMT5 marking K02 switch application
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 154mΩ@ VGS =2.5V, ID =2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.5V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 2.5V Drive Nch+Nch MOSFET Features Low On-resistance. Space saving, small surface mount package (TSMT5). Applications Switching |
| 描述与应用 | 2.5V驱动N沟道+ N沟道MOSFET 特点 低导通电阻。 节省空间，小型表面贴装封装（TSMT5）。 应用 交换 |
