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RK3055ETL MOSFET N-Channel 60V 8A TO-252/D-PAK marking 3055E ultra low RDS/avalanche energy
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.15Ω/Ohm @4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | 10V Drive Nch MOSFET Silicon N-channel MOSFET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Low-voltage drive. Easily designed drive circuits. Easy to use in parallel. |
| 描述与应用 | 10V驱动N沟道MOSFET 硅N沟道MOSFET 低导通电阻。 开关速度快。 宽安全工作区（SOA） 低电压驱动。 轻松驱动电路设计。 易于并联使用 |
