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RN1110 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 4.7k SOT-523/ESM marking XK switch inverting circuit interface circuit and driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplifid manufacturing process Complementary to RN2110~RN2111
描述与应用开关,逆变电路,接口电路 和驱动器电路应用 借助内置的偏置电阻 简化电路设计 减少零件数量,并简化制造工艺 补充到RN2110~~ RN2111
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