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RN1602 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 50 300mW/0.3W SOT-163/SM6/SOT23-6 marking XB switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) • Including two devices in SM6 (super-mini-type with six (6) leads) • With built-in bias resistors • Simplified circuit design • Reduced number of parts and manufacturing process • Complementary to RN2601 to RN2606 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •东芝晶体管的硅NPN外延式(PCT的进程)(偏置电阻内置晶体管)包括两个设备在SM6(超迷你型六(6)导致) •借助内置的偏置电阻 •简化电路设计 •数量减少零部件和制造工艺 •互补RN2601 RN2606 应用 •开关,逆变电路,接口电路和驱动器电路应用
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