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RN2706JE PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=80 R1=4.7KΩ R2=47KΩ 100mW/0.1W SOT-553/ESV marking YF switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | 47 KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 80 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 0.1W |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
|
| Technical Documentation Download | Read Online |
