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PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=70 R1=R2=22KΩ 200mW/0.2W SOT-363/US6/SC70-6 marking YA switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -100MA/-0.1A |
Input Resistance(R1) | 22KΩ |
Base-Emitter Resistance(R2) | 22KΩ |
Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
DC Current Gain(hFE) | 70 |
Transtion Frequency(fT) | 200MHZ |
Power Dissipation (Pd) | 200MW/0.2W |
Description & Applications | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
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Technical Documentation Download | Read Online |