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RN2910 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=120~400 R1=4.7KΩ 200mW/0.2W SOT-363/US6/SC70-6 marking YK switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA/-0.1A
 Input Resistance(R1)  4.7KΩ
Base-Emitter Resistance(R2)  
Base-Emitter Input Resistance Ratio (R1/R2)  
DC Current Gain(hFE)  120~400
Transtion Frequency(fT)  250MHZ
Power Dissipation (Pd)  0.2W
Description & Applications  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 
 
Switching, Inverter Circuit, Interface Circuit 
And Driver Circuit Applications 
 Including two devices in US6 (ultra super mini type with 6 leads) 
With built-in bias resistors 
Simplify circuit design 
Reduce a quantity of parts and manufacturing process
Technical Documentation Download Read Online

 

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