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RN2911 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=120~400 R1=10KΩ 200mW/0.2W SOT-363/US6/SC70-6 marking YM switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | |
| Base-Emitter Input Resistance Ratio (R1/R2) | |
| DC Current Gain(hFE) | 120~400 |
| Transtion Frequency(fT) | 250mhz |
| Power Dissipation （Pd） | 0.2W |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
|
| Technical Documentation Download | Read Online |
