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RN2964FE PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=80 R1=R2=47KΩ 100mW/0.1W SOT563 marking YYD switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 47KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 80 |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 0.1W |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
|
| Technical Documentation Download | Read Online |
