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RN4981FE NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=30 R1=R2=4.7KΩ 100mW/0.1W SOT-563/ES6 marking 6A switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 4.7KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 4.7KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 30
截止频率fT Transtion Frequency(fT) 250MHz/200MHz
耗散功率Pc Power Dissipation 100mW/0.1W
Description & Applications Features • TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
描述与应用 特点 •东芝硅PNP晶体管NPN外延型(PCT工艺)(偏置电阻晶体管) •两个设备都纳入一个极端超迷你(6针)封装。 •将偏置电阻晶体管,减少了部件数量。减少部件数量,能够制造更加紧凑的设备和降低装配成本。 应用 •开关,逆变电路,接口电路和驱动器电路应用。
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