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RSQ045N03 MOSFET N-Channel 30V 4.5A SOT-163/TSMT6/SOT23-6 marking QL

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance56mΩ@ VGS =4V, ID =4.5A
开启电压Vgs(th) Gate-Source Threshold Voltage1~2.5V
耗散功率Pd Power Dissipation1.25W
Description & Applications4V Drive Nch MOS FET Features 1) Low On-resistance. 2) Space saving, small surface mount package . 3) Low voltage drive Applications Switching
描述与应用4V驱动N沟道MOS FET 特点 1)低导通电阻。 2)节省空间,小的表面贴装封装。 3)低电压驱动 应用 开关
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