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RTL035N03 MOSFET N-Channel 30V 3.5A TUMT6/SOT-363/SC70-6/TSSOP6/SC-88 marking pm low noise/high gain/high AGC rating
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 3.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 79mΩ@ VGS =2.5V, ID =3.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | 2.5V Drive Nch MOS FET Features 1) Low on-resistance. 2) Space saving, small surface mount package . 3) Low voltage drive. Applications Switching |
| 描述与应用 | 2.5V驱动N沟道MOS FET 特点 1）低导通电阻。 2）节省空间，小的表面贴装封装。 3）低电压驱动。 应用 开关 |
