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S852TWW NPN Transistors(BJT) 12V 8mA 5.2GHz 90 100mV/0.1V SOT-323/SC-70 marking W52
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 8mA |
| 截止频率fT Transtion Frequency(fT) | 5.2GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 90 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 30mW |
| Description & Applications | Features • Silicon NPN Planar RF Transistor • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. |
| 描述与应用 | 特点 •硅NPN平面RF晶体管 •低电源电压 •低电流消耗 •50Ω输入阻抗在945 MHz •低噪声系数 •高功率增益 •铅（Pb）免费组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 •适用于低噪声和高增益宽带放大器集电极电流0.2毫安〜5毫安。 |
