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S9012LT12T1 PNP transistors（BJT） -40V -500mA/-0.5A 150MHz 120~200 -600mV/-0.6V SOT-23 marking 2T1
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP General Purpose Transistors Lead-Free |
| 描述与应用 | PNP通用晶体管 无铅 |
