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SBT2222A NPN Transistors(BJT) 75V 600mA/0.6a 250MHz 100 400mV/0.4V SOT-23/SC-59 marking 1P
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
截止频率fT Transtion Frequency(fT) | 250MHz |
直流电流增益hFE DC Current Gain(hFE) | 100 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | Features • NPN Silicon Transistor • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT2907A Descriptions • General purpose application • Switching application |
描述与应用 | 特点 •NPN硅晶体管 •低漏电流 •低集电极饱和电压,使低电压操作 •互补配对MMBT2907A 简述 •通用应用 •开关应用 |