My order
Share to:  
Location:Home > Stock Inventory > Product Details

SGM2014M MESFET-N channel 12V 8mA-28mA -2.5V SOT-143 marking D RF application/low noise/Low cross-modulation

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage
12V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-5V
漏极电流(Vgs=0V)IDSS
Drain Current
8mA-28mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-2.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsGaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. UHF band amplifier,mixer and oscillator Low voltage operation Low noise High gain Low cross-modulation High stability Built gate-protection diode
描述与应用砷化镓N沟道双栅MES FET 描述 在该SGM2014AM是一个N沟道双栅砷化镓 MES 场效应管为UHF频段的低噪声放大。这FET是一个适用于广泛的应用,包括电视调谐器,移动设备和DBS中频放大器。 超高频频段的放大器,混频器和振荡器 低电压操作 低噪音 高增益 低交叉调制 高稳定性 内置栅极保护二极管
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00