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SGM2014M MESFET-N channel 12V 8mA-28mA -2.5V SOT-143 marking D RF application/low noise/Low cross-modulation
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -5V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 8mA-28mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -2.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. UHF band amplifier,mixer and oscillator Low voltage operation Low noise High gain Low cross-modulation High stability Built gate-protection diode |
| 描述与应用 | 砷化镓N沟道双栅MES FET 描述 在该SGM2014AM是一个N沟道双栅砷化镓 MES 场效应管为UHF频段的低噪声放大。这FET是一个适用于广泛的应用，包括电视调谐器，移动设备和DBS中频放大器。 超高频频段的放大器，混频器和振荡器 低电压操作 低噪音 高增益 低交叉调制 高稳定性 内置栅极保护二极管 |
