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SI1417DH MOSFET P-Channel -12V -2.7A 160mohm SOT-363 marking BDE load switch ESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -2.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 160mΩ@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES Thermally Enhanced SC-70 Package ESD Protected: 3000 V APPLICATIONS Load Switching PA Switch Level Switch |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 耐热增强型SC-70封装 ESD保护：3000 V 应用 负载开关 PA开关 液位开关 |
