SI1499DH-T1-E3 MOSFET P-Channel -8V -1.6A 0.0622ohm SOT-363 marking BI power MOSFET ultra low on-resistance|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI1499DH-T1-E3 MOSFET P-Channel -8V -1.6A 0.0622ohm SOT-363 marking BI power MOSFET ultra low on-resistance

Model：SI1499DH-T1-E3
Mark / screen / code / typing：BI
Manufacturer：
Date Code：08NOPB 08NOPB
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-8V
最大栅源极电压Vgs(±) Gate-Source Voltage	5V
最大漏极电流Id Drain Current	-1.6A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.0622Ω @-2A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.35--0.8V
耗散功率Pd Power Dissipation	2.78W
Description & Applications	FEATURES • TrenchFET Power MOSFET • Ultra-Low On-Resistance
描述与应用	功率MOSFET •超低导通电阻

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