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SI2301DS MOSFET P-Channel -20V -2.3A 0.105ohm SOT-23 marking R1

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-2.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.105Ω @-2.8A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.45V
耗散功率Pd
Power Dissipation		1.25W
Description & ApplicationsP-Channel 1.25-W, 2.5-V MOSFET
描述与应用P沟道1.25-W，2.5-V MOSFET
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