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SI2304BDS-T1-E3 MOSFET N-Channel 30V 3.2A SOT-23/SC-59 marking L4 low on-resistance/low-voltage drive

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.105Ω/Ohm @2A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5-3.0V
耗散功率Pd Power Dissipation1.08w
Description & ApplicationsN-Channel 1.25-W, 2.5-V MOSFET
描述与应用N沟道1.25-W, 2.5 V MOSFET
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