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SI2304DS MOSFET N-Channel 30V 1.7A SOT-23/SC-59 marking P2S low on-resistance/low-voltage drive/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.117Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 echnology TrenchMOS™ technology Very fast switching Subminiature surface mount package. |
| 描述与应用 | N沟道增强型场效应晶体管 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技 TrenchMOS™技术 开关速度非常快 超小型表面贴装封装 |
