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SI2306DS MOSFET N-Channel 30V 3.5A SOT-23/SC-59 marking R6low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.057Ω/Ohm @3.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1V
耗散功率Pd Power Dissipation1.25W
Description & ApplicationsN-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET 100% Rg Tested
描述与应用N沟道30-V(D-S)的MOSFET 功率MOSFET 100%的Rg测试
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