SI2312BDS-T1-GE3 MOSFET N-Channel 30V 3.5A SOT-23/SC-59 marking M2 DC/DC converter/low on-resistance|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2312BDS-T1-GE3 MOSFET N-Channel 30V 3.5A SOT-23/SC-59 marking M2 DC/DC converter/low on-resistance

Model：SI2312BDS-T1-GE3
Mark / screen / code / typing：M2
Manufacturer：
Date Code：06+NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.057Ω/Ohm @3.5A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1V
耗散功率Pd Power Dissipation	1.25W
Description & Applications	TrenchFET Power MOSFET 100% Rg Tested
描述与应用	功率MOSFET 100％的Rg测试

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