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SI3443DV MOSFET P-Channel -20V -4A 100mohm SOT-163 marking 443 load switch battery protection power management
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
| 最大漏极电流Id Drain Current | -4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 100mΩ@ VGS = -2.5V, ID = -3.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4~-1.5V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | P-Channel 2.5V Specified Power Trench MOSFET Applications Load switching Battery protection Power management Features Fast switching speed Low gate charge |
| 描述与应用 | P沟道2.5V额定功率沟道MOSFET 应用 负载开关 电池保护 电源管理 特点 开关速度快 低栅极电荷 |
