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SI3552DV Complex FET 30V/-30V 2.5A/-1.8A SOT-163/SOT23-6/TSOP-6 marking 52
最大源漏极电压Vds Drain-Source Voltage | 30V/-30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V/20V |
最大漏极电流Id Drain Current | 2.5A/-1.8A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 175mΩ@ VGS =4.5V, ID =2A/360mΩ@ VGS =-4.5V, ID =-1.2A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1V/-1V |
耗散功率Pd Power Dissipation | 1.15W |
Description & Applications | N- and P-Channel 30-V (D-S) MOSFET |
描述与应用 | N沟道和P-通道 30-V(D-S)的MOSFET |