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SI3900DV Complex FET 20V 2A SOT-163/SOT23-6/TSOP-6 marking OOL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
200mΩ@ VGS =2.5V, ID =1A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.6V
耗散功率Pd
Power Dissipation
830mW/0.83W
Description & ApplicationsDual N-Channel 20-V (D-S) MOSFET
描述与应用双N沟道 20-V(D-S)的MOSFET
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