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SI8415DB MOSFET P-Channel -12V -7.3A 0.031ohm Vth:-0.4V-1.0V 2X2 4-MFP marking power MOSFET ultra low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -7.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.031Ω @-1A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4V-1.0V |
| 耗散功率Pd Power Dissipation | 2.77W |
| Description & Applications | FEATURES TrenchFET Power MOSFET New MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area Ultra-Low On-Resistance |
| 描述与应用 | 功率MOSFET 新的MICRO FOOT？芯片级封装 减少占位面积简介（0.62毫米） 每占位面积导通电阻 超低导通电阻 |
