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SMBT2222A NPN Transistors(BJT) 75V 600mA/0.6a 300MHz 100~300 300mV/0.3V SOT-23/SC-59 marking 1P switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | Features • NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500mA • Low collector-emitter saturation voltage • Complementary type: SMBT2907 (PNP) |
| 描述与应用 | 特点 •NPN型硅开关晶体管 •高直流电流增益：0.1mA至500mA的 •低集电极 - 发射极饱和电压 •互补型：SMBT2907（PNP） |
