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SS5817-T SBD Schottky Barrier Diodes 20V 1A 750mV/0.75V SMA/DO-214AC marking SS5817 low forward voltage

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Product description
反向电压Vr
Reverse Voltage
20V
平均整流电流Io
AVerage Rectified Current
1A
最大正向压降VF
Forward Voltage(Vf)
750mV/0.75V
最大耗散功率Pd
Power dissipation
Description & Applications• Metal silicon junction ,majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • High surge capability
描述与应用•金属硅交界处,大部分载波传导 •对于表面装载应用 •过压保护保护环 •低功耗,高效率 •高电流能力,低正向压降 •高浪涌能力
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