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SSM3K02F MOSFET N-Channel 30V 1A SOT-23/SC-59 marking KU VHF tuner/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.2Ω/Ohm @500mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 小包装 低导通电阻RON =120MΩ（最大）（@ VGS=4V） ：RON =150MΩ（最大）（@ VGS=2.5 V） 低栅极阈值电压VTH =0.6〜1.1 V（@ VDS=3 V，ID= 0.1毫安） |
