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SSM6N03FE Complex FET 20V 100mA/0.1A SOT-563/ES6 marking DA high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1200mΩ@ VGS = 2.5V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.7~1.3V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ● Input impedance is high. Driving current is extremely low. ● Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. ● High-speed switching. ● Housed in a ultra-small package which is suitable for high density mounting. |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 ●输入阻抗高。驱动电流极低。 ●可直接驱动CMOS器件即使在低电压低栅极阈值电压。 ●高速开关。 ●坐落在一个超小型封装，适用于高密度 安装。 |
