SSM6N04FU Complex FET 20V 100mA/0.1A SOT-363/SC70-6/UF6 marking DC high-speed switch|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SSM6N04FU Complex FET 20V 100mA/0.1A SOT-363/SC70-6/UF6 marking DC high-speed switch

Model：SSM6N04FU
Mark / screen / code / typing：DC
Manufacturer：
Date Code：11+ROHS 11+ROHS
Package：SOT-363/SC70-6/UF6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V
最大栅源极电压Vgs(±) Gate-Source Voltage	10V
最大漏极电流Id Drain Current	100mA/0.1A
源漏极导通电阻Rds Drain-Source On-State Resistance	1200mΩ@ VGS = 2.5V, ID = 10mA
开启电压Vgs（th） Gate-Source Threshold Voltage	0.7~1.3V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications ●With built-in gate-source resistor: RGS = 1 MΩ (typ.) ●2.5 V gate drive ●Low gate threshold voltage: Vth = 0.7~1.3 V ●Small package
描述与应用	东芝场效应晶体管的硅N沟道MOS类型高速开关应用 ●借助内置的栅极 - 源极电阻器：RGS= 1MΩ（典型值） ●2.5 V门极驱动 ●低栅极阈值电压VTH =0.7〜1.3 V ●采用小型封装。

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