Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
STD17NF03LT4 MOSFET N-Channel 30V 3.6A TO-263 marking D17NF03L fast switch/low on-resistance
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 3.6A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.020Ω/Ohm @1.6A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.5V |
耗散功率Pd Power Dissipation | 75W |
Description & Applications | TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED |
描述与应用 | 典型的RDS(on)= 0.015Ω 典型的Qg=18 NC@ 10V 最优的RDS(on)×QG权衡 减少传导损耗 减少开关损耗 |