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Integrated Circuit（IC） NAND gate TC7SG00FE SOT-553/ESV marking W1
| 逻辑类型 Logic Type | 与非门 NAND Gate |
| 电路数 Number of Circuits | 1 |
| 输入数 Number of Inputs | 2 |
| 电源电压Vcc Voltage - Supply | 0.9V~3.6V |
| 静态电流Iq Current - Quiescent (Max) | 50000uA |
| 输出高，低电平电流 Current - Output High, Low | -8mA,8mA |
| 低逻辑电平 Logic Level - Low | 0.7 V ~ 0.8 V |
| 高逻辑电平 Logic Level - High | 1.7v~2V |
| 传播延迟时间@Vcc，CL Max Propagation Delay @ V, Max CL | 21ns @3.3V ，15pF |
| Description & Applications | 2 Input NAND Gate ；• High-level output current: IOH/IOL = ±8 mA (min) at VCC = 3.0 V • High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. |
| 描述与应用 | 2输入与非门;•高输出电流：IOH/ IOL=±8 mA（分钟） 在VCC= 3.0 V •高速操作：TPD =2.5 ns（典型值） 在VCC =3.3 V，15PF •工作电压范围：VCC= 0.9〜3.6 V •5.5-V宽容投入。 •3.6-V断电保护输出。 |
