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TN2106K1 MOSFET N-Channel 280mA/0.28A SOT-23/SC-59 marking N1LG fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current280mA/0.28A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.4Ω/Ohm @500mA,25V
开启电压Vgs(th) Gate-Source Threshold Voltage0.6-2.0V
耗散功率Pd Power Dissipation360mW/0.36W
Description & ApplicationsFree from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
描述与应用无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统 和快速开关速度 优良的热稳定性 积分源漏二极管 高输入阻抗,高增益 互补N和P沟道器件
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