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TP2104K1 MOSFET P-Channel -600mA 6ohm SOT-23 marking PILC no secondary breakdown high input impedance high gain

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Product description
最大源漏极电压Vds
Drain-Source Voltage
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-600mA/-0.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
6Ω @-500mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
360mW/0.36W
Description & ApplicationsFeatures Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
描述与应用无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统和快速开关速度 优良的热稳定性 积分源漏二极管 高输入阻抗,高增益 互补N和P沟道器件
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